sot-23 plastic-encapsulate mosfets CJ2306 n-channel 30-v(d-s) mosfet feature trenchfet power mosfet applications z load switch for portable devices z dc/dc converter marking: s6 maximum ratings (at t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current (t j =150 ) a,b i d 3.16 pulsed drain current i dm 20 continuous source current(diode conduction) a,b i s 0.62 a maximum power dissipation a,b p d 0.75 w operating junction and s tor age temperature range t j, t stg -55 to150 notes : a. surface mounted on 1? 1? fr4 board, t 5s. b. pulse width limited by maximum junction temperature. so t -23 1. gate 2. source 3. drain thermal resistance from junction to ambient (t 5s ) r ja 100 /w 1 of 2 sales@zpsemi.com www.zpsemi.com CJ2306 a,may,2012
electrical characteristics (at t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br) ds v gs = 0v, i d =250a 30 gate-threshold voltage v gs(th) v ds =v gs , i d =250a 1.0 3.0 v gate-body leakage i gss v ds =0v, v gs = 20v 100 na zero gate voltage drain current i dss v ds =30v, v gs =0v 0.5 a v gs =10v, i d =3.5a 0.038 0.047 drain-source on-resistance a r ds(on) v gs =4.5v, i d =2.8a 0.052 0.065 ? forward transconductance a g fs v ds =4.5v, i d =2.5a 7.0 s diode forward voltage v sd i s =1.25a,v gs =0v 0.8 1.2 v dynamic gate charge q g v ds =15v,v gs =5v,i d =2.5a 3.0 4.5 total gate charge q gt 6 9 gate-source charge q gs 1.6 gate-drain charge q gd v ds =15v,v gs =10v,i d =2.5a 0.6 nc gate resistance r g f =1.0mhz 2.5 5 7.5 ? input capacitance c iss 305 output capacitance c oss 65 reverse transfer capacitance c rss v ds =15v,v gs =0v,f =1mhz 29 pf switching turn-on delay time t d(on) 7 11 rise time t r 12 18 turn-off delay time t d(off) 14 25 fall time t f v dd =15v, r l =15 ? , i d 1a, v gen =10v,rg=6 ? 6 10 ns notes : a.pulse test : pulse width 300s, duty cycle 2%. 2 of 2 sales@zpsemi.com www.zpsemi.com CJ2306 a,may,2012
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